Although silicon semiconductors are nearly universal in modern electronics, devices made from silicon have limitations — including that they cease to function properly at very high temperatures. One promising alternative are semiconductors made from combinations of aluminum, gallium and indium with nitrogen to form aluminum nitride (AlN), gallium nitride (GaN), and indium nitride (InN), which are stronger and more stable than their silicon counterparts, function at high temperatures, are piezoelectric (that is, generate voltage under mechanical force), and are transparent to, and can emit, visible light.
Conventional processes for producing AIN layers run at temperatures as high as 1,150 C, and offer limited control over the thickness of the layers. Now a new technique, described in the American Institute of Physics Publishing journal Applied Physics Letters, offers a way to produce high-quality AlN layers with atomic-scale thickness and at half the temperature of other methods.
Read more: http://www.laboratoryequipment.com/news/2013/11/semiconductors-can-be-made-lower-temp