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  1. Atomically-Flat Transistors Hold Promise for Green ElectronicsResearchers at UC Santa Barbara, in collaboration with Univ. of Notre Dame, have recently demonstrated the highest reported drive current on a transistor made of a monolayer of tungsten diselenide (WSe2), a 2-dimensional atomic crystal categorized as a transition metal dichalcogenide (TMD). The discovery is also the first demonstration of an “n-type” WSe2 field-effect-transistor (FET), showing the tremendous potential of this material for future low-power and high-performance integrated circuits.Monolayer WSe2 is similar to graphene in that it has a hexagonal atomic structure and derives from its layered bulk form in which adjacent layers are held together by relatively weak Van der Waals forces. However, WSe2 has a key advantage over graphene.Read more:http://www.laboratoryequipment.com/news/2013/06/atomically-flat-transistors-hold-promise-green-electronics

    Atomically-Flat Transistors Hold Promise for Green Electronics

    Researchers at UC Santa Barbara, in collaboration with Univ. of Notre Dame, have recently demonstrated the highest reported drive current on a transistor made of a monolayer of tungsten diselenide (WSe2), a 2-dimensional atomic crystal categorized as a transition metal dichalcogenide (TMD). The discovery is also the first demonstration of an “n-type” WSe2 field-effect-transistor (FET), showing the tremendous potential of this material for future low-power and high-performance integrated circuits.

    Monolayer WSe2 is similar to graphene in that it has a hexagonal atomic structure and derives from its layered bulk form in which adjacent layers are held together by relatively weak Van der Waals forces. However, WSe2 has a key advantage over graphene.

    Read more:http://www.laboratoryequipment.com/news/2013/06/atomically-flat-transistors-hold-promise-green-electronics

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