Atomically-Flat Transistors Hold Promise for Green Electronics
Researchers at UC Santa Barbara, in collaboration with Univ. of Notre Dame, have recently demonstrated the highest reported drive current on a transistor made of a monolayer of tungsten diselenide (WSe2), a 2-dimensional atomic crystal categorized as a transition metal dichalcogenide (TMD). The discovery is also the first demonstration of an “n-type” WSe2 field-effect-transistor (FET), showing the tremendous potential of this material for future low-power and high-performance integrated circuits.
Monolayer WSe2 is similar to graphene in that it has a hexagonal atomic structure and derives from its layered bulk form in which adjacent layers are held together by relatively weak Van der Waals forces. However, WSe2 has a key advantage over graphene.